band offset
基本解释
- 带偏
专业释义
- 带偏
Finally, we discuss the electronic properties of BaTiO_3-ZnO heterostructure from its interfacial atomic structures. Band offset calculations show that electrons in ZnO atomic layers will be prevented from transmitting to BaTiO_3 side, providing possibilities for manufacturing ferroelectric-semiconductor heterostructure-based devices.
最后，从界面原子结构出发深入讨论了BaTiO_3-ZnO异质结构的电子特性，其中带偏计算表明电子从ZnO一侧难以越过界面势垒到达BaTiO_3侧，从而为研制基于铁电-半导体异质结构的纳米器件提供了可能。物理学
- 能带结构
As for the theoretical analysis and calculation, we use both the classical analytical Anderson model and novel numerical C-V Matching method to analyze the band structure of the nc-Si:H/c-Si, and successfully obtain the band offset and interface charge density parameters.
理论分析和计算方面,文本重点介绍了利用电容—电压谱测量PN结物理特性的经典方法和新颖的C-V Matching数值回归分析方法基本理论,并利用这两种方法对nc-Si:H/c-Si异质结二极管的电容—电压谱和能带结构进行了详细的计算和分析,得到了明确的能带断裂参数和界面电荷密度的数值。化学
- 带能差距