minority-carrier

基本解释

Energy gap and minority-carrier recombination lifetime are important physical parameters in the emitter of silicon transistor.
禁带宽度和少子复合寿命是硅晶体管发射区中重要的物理参数。
The authors improved the routine steady-state surface photovoltage method to measure minority carrier diffusion length in both sides polished silicon wafers.
本文改进了常规表面光电压测试少子扩散长度法，采用环形下电极消除了薄样品背面光电压信号对测量结果的影响；
This paper calculates the expression between minority-carrier lifetime and switching time in short diode by analyzing the continuity equation when considering the surface recombination.
并使用连续性方程，在考虑表面复合过程的情况下，提出了短二极管的少子寿命计算公式。

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the entity responsible for carrying the lesser part of the current in a semiconductor &rarrcompare majority carrier