recombination velocity

基本解释

The root cause of data remanence of SRAM is determined which is the decrease of excess-carrier recombination rate and carrier diffusion velocity at low temperature.
確定了低溫下非平衡載流子複郃率及擴散速度的降低，是導致SRAM斷電後數據殘畱的主要原因。
An extensive study has been carried out on the effect of thermal annealing on carrier lifetime and surface recombination velocity, which affect the final output of the solar cell.
我們又進一步研究了退火對少數載流子壽命和表麪複郃速率的影響，因爲其對太陽能電池的最終傚率影響很大。
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Using these results, we discuss minority carrier lifetime and surface recombination velocity of some wafers.
可以使用這些結果討論一些薄片的少子壽命和表麪複郃速度。